利用微波等离子体化学气相沉积法,在Si(100)衬底上制备了碳纳米球薄膜。利用拉曼光谱和场发射扫描电子显微镜研究了薄膜的结构以及表面形貌,表明碳纳米球薄膜是由约2~3μm长、100nm宽的无定形碳纳米片相互缠绕、交织成球状而构成的。在高真空系统中测量了碳纳米球薄膜的场发射特性,结果表明,碳纳米球薄膜具有良好的场发射特性,阈值电场为3.1V/μm,当电场增加到10V/μm时,薄膜的场发射电流密度可达到60.7mA/cm2。通过三区域电场模型合理地解释了碳纳米球薄膜在低电场、中间电场和高电场区域的场发射特性。
Carbon nanometer ball films were deposited on Si (100) by microwave plasma chemical vapor deposition. The structure and surface morphology of carbon nanometer ball films was investigated by using Raman spectroscopy and field emission scanning electron mi- croscope. The carbon nanometer ball film was composed of large numbers of about 2-3 μm- length and 100 nm-width amorphous carbon sheets which were intertwined and interwoven with each other into a ball. The field emission testing of carbon nanometer ball films was performed in a high vacuum system, and good field emission properties with a threshold field of 3.1 V//xm and a current density of 60. 7 mA/cm2 at an electric field of 10 V/μm were obtained from the carbon films. A three electric filed model was applied to explaining reasonably the field emission characteristics of carbon nanometer ball films in the low, middle and high elec- tric field region.