采用化学溶液法在Si(111)衬底上制备了YMnO3薄膜。XRD结果表明,所制备的薄膜为六方纯相YMnO3,且具有部分择优取向生长。以Pt为顶电极,测试了YMnO3薄膜的电滞回线,结果表明,所制备的YMnO3薄膜具有良好的铁电性质。
The YMnO3 thin film is prepared on Si(111) substrate by chemical solution deposition. The result of XRD displays that the sample is pure hexagonal phase with partly c-axis orientation. D-E hysteresis loop of metal/ferroelectric/metal capacitors using hexagonal YMnO3 thin films deposited on Si(111) substrate is measured. The results of the measurement show that the thin films have well ferroelectric performance.