欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
利用硅烷偶联剂KH-570（γ-甲基丙烯酰氧基甲氧基硅烷）水解缩合生成的多面低聚倍半硅氧烷（POSS）溶胶为模板剂，经热解制备低介电多孔薄膜材料．使用FTIR对材料制备过程及形成机制进行动态研究，通过^29Si NMR、椭偏仪、氮气吸脱附曲线和TEM等对材料的介电性质、孔洞大小和分布情况进行表征．制备的介电多孔薄膜材料孔洞分布均匀、孔径约1nm，比表面积为384．1m^2／g，介电常数为2．5的低．
英文摘要：
POSS sol-gel as the. porous silica template was prepared by hydrolyzation and condensation of KH- 570（γ-methacryloxypropyhrimethoxy silane）. Porous film with a low dielectric constant was obtained by calcination of POSS template. The process and mechanism of film formation were investigated by I;TIR and its structure was characterized by ^29Si NMR. Ellipsometr, N2 adsorption-desorption and TEM. The results show that the film possesses uniform pore with about 1 nm size, dielectric constant 2. 5, and Sbet=384. 1 m^2/g and the effects of the surface modification reagent and it＇s caneentration on the dielectric property of film were discussed.
同期刊论文项目
同项目期刊论文
期刊信息
位置：