以CoCl2,SbCl3和Te粉为原料,NaBH4为还原剂,用溶剂热方法合成了Te掺杂方钴矿CoSb(3-x)Tex(x=0,0.05,0.1,0.2,0.4)纳米粉末.研究发现,Te含量较高的样品(x≥0.2)有明显的CoTe2等杂相存在.CoSb(3-x)Tex合成粉末的粒径大小在40nm左右,热压后晶粒发生长大,平均晶粒尺寸约为300nm.电学性能测试表明Te掺杂方钴矿CoSb(3-x)Tex的导电类型为n型,Seebeck系数的绝对值随着Te含量的增加而变小,电导率随着Te含量的增加而增大.在测试温度范围内,CoSb(2.8)Te(0.2)具有最高的功率因子,在773K温度下达到2.3×10^-3W·m^-1·K^-2.
Nanosized Te-doped skutterudites CoSb3-xTex(x=0, 0.05, 0.1, 0.2, 0.4) were prepared by a solvothermal method using CoCl2, SbCl3 and pure telluride powder as precursors and NaBHa as reductant. It is found that trace of other impurity phases such as CoTes are coexisted for x ≥0.2. The size of synthesized CoSb3-xTex powders is about 40nm, and the grains are grown up to an average size of about 300nm after hot-pressing. Transport properties measurements indicate that the Te-doped CoSb3-xTex have n-type conduction. As the Te fraction increases, the values of electrical conductivity increase, while the absolute Seebeck coemcient values decrease. A maximum power factor of 2.3×10^-3W·m^-1·K^-2 is obtained at 773K for CoSb2.8Te0.2.