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Heavily p-type doped chemical vapor deposition graphene field-effect transistor with current saturat
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2013.11.11
  • 页码：-
  • 相关项目：互补型石墨烯场效应晶体管器件研究
作者： Peng, Song-ang|Jin, Zhi|Ma, Peng|Yu, Guang-hui|Shi, Jing-yuan|Zhang, Da-yong|Chen, Jiao|Liu, Xin-yu|Ye, Tian-chun|
同期刊论文项目
互补型石墨烯场效应晶体管器件研究
期刊论文 5 专利 5
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