中文摘要：

通过在宽区GaSb基半导体激光器波导中引入鱼骨型微结构,实现了瓦级激光输出并且改善了侧向发散角.本文通过分析微结构的刻蚀深度对激光功率和远场特性的影响,研究并发现了微结构的引入可以明显的提高激光器输出功率,同时深刻蚀的微结构对降低模式数和侧向发散角有着更明显的改善作用.相比于未引入微结构的激光器,引入深刻蚀微结构的宽区激光器侧向95%功率定义的远场发散角降低了大约57%,并且实现了超过1.1 W的最大连续输出功率.

英文摘要：

GaSb based broad-area （BA） diode lasers with watt-class emission power and improved divergence were demonstrated using a fishbone shape microstructure. The influences of etching depth of microstructure on the emis- sion and far-field performance were investigated. It was found that the utilization of microstructure was able to en- hance the emission power evidently. Moreover, the deeply etched microstructure was more effective on the de- crease of mode number and lateral far-field divergence. Compared with the device without microstructure, the deeply etched BA lasers show 57% decrease in the lateral far-field angle defined by the 95% power content, and the maximum continuous-wave （CW） outout oower exceeds 1.1 W.