中文摘要：

通过MBE外延系统生长了22μGaSb基A1GaAsSb／InGaSbI型量子阱激光器，并制备了宽面条形波导激光器件，在20℃工作温度下，器件最大连续激射功率达到1．058W，当注入电流为0．5A时，峰值波长为1．977μ，最大能量转换效率为20．2％，在脉冲频率为1000Hz，占空比为5％的脉冲工作模式下，最大激射功率为2．278W．

英文摘要：

GaSb-based A1GaAsSb/InGaSb type-I quantum-wells （QW） 2 μm laser diodes （LDs） have been grown by MBE system. Stripe-type waveguide LDs with facets uncoated were fabricated and characterized. For single LD device, the maximum output power was 1. 058 W under continuous wave （CW） operation at working temperature of 20℃. The maximum wall plug efficiency （WPE） was 20.2% and peak wavelength was 1. 977μm with injection current 0.5 A. The output power under pulse mode of 1000 Hz in 5% duty cycles was 2. 278 W.