中文摘要：

通过低氟金属有机物沉积方法（MOD）在哈氏合金基底上制备了一系列Y1-xGdxBa2Cu3O7-δ（x=0，0．23，0．5，0．77，1）超导薄膜．X光衍射（XRD）分析表明：Gd抖掺杂使YBa2Cu3O7-δ超导薄膜外延生长易于形成，X光极图显示，随掺杂量增加，其面内取向半高宽随名义掺杂量的增加呈非线性变化．与纯YBCO相比，掺杂薄膜具有更好的表面形貌。Gd^3＋掺杂的样品的超导性能均优于纯YBCO的性能．在77K、自场下适当掺杂量有助于超导薄膜临界电流密度的提高，这可能由于掺杂形成的调制结构可以作为磁通钉扎中心．

英文摘要：

A series of Y1-xGdxBa2Cu3O7-δ（x=0,0. 23,0. 5,0. 77,1）superconducting thin films were prepared on Hastelloy substrate by low fluorine MOD process. The X ray diffraction （XRD） analysis showed that the epitaxial growth of Gd doped YBa2Cu3O7-δ superconducting thin film is easier to form. The pole figures showed the he inplane orientation of FWHM of Y1-xGdxBa2Cu3O7-δ changes nonlinearly with increasing the nominal amount of Gd-doping. The doped films have higher performance and better surface morphology, compared with pure YBCO thin films. Appropriate doping may lead to the enhancement of critical current density in 77K, self field, which may due to modulation structure formed by doping can be effective flux pinning centers.