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新型碳材料基础
  • 所属机构名称：北京大学
  • 会议名称：2009年全国功能材料量子设计和量子物理研究生暑期学校
  • 成果类型：会议
  • 相关项目：一维纳米材料电学性能的定量研究
作者： 彭练矛|
同会议论文项目
一维纳米材料电学性能的定量研究
期刊论文 35 会议论文 27
同项目会议论文
Carrier injection switch and in-situ experiments
Structure, growth and modification of nanostructures made from layered metal oxides
In-situ fabrication, manipulation and property measurements on single nanotubes and nanowires with n
Controlled engineering of nanostructures with near atomic precision and their properties
In-situ fabrication, manipulation and property mearurements on single nanotubes and nanowires with n
In-situ fabrication, manipulation and property measurements on single nanotubes and nanowires with n
一维纳米材料的结构、生长和物性
Quantitative convergent beam diffraction and inversion
Development of ballistic n-type CNT based FETs and its implication for CMOS technology
Developments of carbon nanotube based doping free CMOS and optoelectronic devices
High performance carbon nanotube based CMOS and optoelectronics devices
Characterizing individual nanostructures: the structure and electrical, mechanical, and optical prop
Measuring and quantitatively analyzing the electrical characteristics of individual semiconducting n
Carbon nanotube materials: in-situ manipulation and potential for electronic devices
Carbon Nanotube Based Doping Free Ballistic CMOS Technology
后硅时代的电子学：从硅到碳
电镜和电子衍射
Field Effect and Photoelectronic Property of Nanodevices Made from Single Bi2S3 Nanowire
Quantitative analysis of current-voltage characteristics of semiconducting nanowires: decoupling the
Dynamical electron diffraction calculations via the optical potential method
C haracterizing Individual Nanostructures: Structure, Electrical, Mechanical and Optical Properties
后硅时代的纳米电子学：从硅到碳
单根碳纳米管的力学和电学特性原位研究
Characterizing Individual Nanostructures: Structure, Electrical, Mechanical and Optical Properties
CNT based doping-free ballistic CMOS devices
High performance carbon nanotube based doping free CMOS and optoelectronics devices