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C haracterizing Individual Nanostructures: Structure, Electrical, Mechanical and Optical Properties
  • 所属机构名称：北京大学
  • 会议名称：BCEIA2009: The 13th Beijing Conference and Exhibition on Instrumental Analysis
  • 成果类型：会议
  • 会场：北京
  • 相关项目：一维纳米材料电学性能的定量研究
作者： 彭练矛|
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一维纳米材料电学性能的定量研究
期刊论文 35 会议论文 27
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一维纳米材料的结构、生长和物性
Quantitative convergent beam diffraction and inversion
Development of ballistic n-type CNT based FETs and its implication for CMOS technology
Developments of carbon nanotube based doping free CMOS and optoelectronic devices
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Measuring and quantitatively analyzing the electrical characteristics of individual semiconducting n
Carbon nanotube materials: in-situ manipulation and potential for electronic devices
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后硅时代的电子学：从硅到碳
电镜和电子衍射
Field Effect and Photoelectronic Property of Nanodevices Made from Single Bi2S3 Nanowire
Quantitative analysis of current-voltage characteristics of semiconducting nanowires: decoupling the
Dynamical electron diffraction calculations via the optical potential method
后硅时代的纳米电子学：从硅到碳
单根碳纳米管的力学和电学特性原位研究
Characterizing Individual Nanostructures: Structure, Electrical, Mechanical and Optical Properties
CNT based doping-free ballistic CMOS devices
High performance carbon nanotube based doping free CMOS and optoelectronics devices
新型碳材料基础