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Development of ballistic n-type CNT based FETs and its implication for CMOS technology
所属机构名称:北京大学
会议名称:The 8th Annual International Centre for Quantum Structures Workshop on Carbon Nanostructures
成果类型:会议
相关项目:一维纳米材料电学性能的定量研究
作者:
彭练矛|
同会议论文项目
一维纳米材料电学性能的定量研究
期刊论文 35
会议论文 27
同项目会议论文
Carrier injection switch and in-situ experiments
Structure, growth and modification of nanostructures made from layered metal oxides
In-situ fabrication, manipulation and property measurements on single nanotubes and nanowires with n
Controlled engineering of nanostructures with near atomic precision and their properties
In-situ fabrication, manipulation and property mearurements on single nanotubes and nanowires with n
In-situ fabrication, manipulation and property measurements on single nanotubes and nanowires with n
一维纳米材料的结构、生长和物性
Quantitative convergent beam diffraction and inversion
Developments of carbon nanotube based doping free CMOS and optoelectronic devices
High performance carbon nanotube based CMOS and optoelectronics devices
Characterizing individual nanostructures: the structure and electrical, mechanical, and optical prop
Measuring and quantitatively analyzing the electrical characteristics of individual semiconducting n
Carbon nanotube materials: in-situ manipulation and potential for electronic devices
Carbon Nanotube Based Doping Free Ballistic CMOS Technology
后硅时代的电子学:从硅到碳
电镜和电子衍射
Field Effect and Photoelectronic Property of Nanodevices Made from Single Bi2S3 Nanowire
Quantitative analysis of current-voltage characteristics of semiconducting nanowires: decoupling the
Dynamical electron diffraction calculations via the optical potential method
C haracterizing Individual Nanostructures: Structure, Electrical, Mechanical and Optical Properties
后硅时代的纳米电子学:从硅到碳
单根碳纳米管的力学和电学特性原位研究
Characterizing Individual Nanostructures: Structure, Electrical, Mechanical and Optical Properties
CNT based doping-free ballistic CMOS devices
High performance carbon nanotube based doping free CMOS and optoelectronics devices
新型碳材料基础