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一维纳米材料电学性能的定量研究
  • 项目名称：一维纳米材料电学性能的定量研究
  • 项目类别：重大研究计划
  • 批准号：90606026
  • 申请代码：F010103
  • 项目来源：国家自然科学基金
  • 研究期限：2007-01-01-2009-12-31
  • 项目负责人：彭练矛
  • 负责人职称：教授
  • 依托单位：北京大学
  • 批准年度：2006
中文摘要：

从实验和理论两个方面开展了一维纳米材料电输运性能的定量研究，特别是碳纳米管和半导体纳米线材料的结构、性能关系研究。具体研究内容包括（1）纳米管、线材料的电子输运性能对于材料的长度和直径的关系。（2）纳米管、线材料的电子输运性能对于材料结构的依赖关系。（3）所用电极材料和电极结构对于纳米管、线材料的电子输运性能的影响。（4）掺杂对于半导体纳米线电子输运性能的影响。（5）低温下纳米管、线材料的电子输运所展现的新行为，新型的纳电子材料和器件结构探索。本项目发表研究论文33篇，包括影响因子大于6的研究论文13篇，Nano Letters (3), Adv. Mater. (3), JACS (1), Adv Func Mater. (3), Phys. Rev. Lett. (2), Small (1), 其它影响因子大于3的论文17篇。研究结果被包括美国物理学会，化学学会，自然杂质亚太材料网站，英国物理学会等网站作为研究热点报道。

中文主题词： 纳米电子学;介观物理;低维系统;纳米电子材料;纳电子器件
结论摘要：

英文主题词Nanoelectronics, Mesoscopic Physics, Lowdimensional System, Nanoelectronic Materials, Nanoelectronic Devices

成果综合统计
成果类型
数量
  • 期刊论文
  • 会议论文
  • 专利
  • 获奖
  • 著作
  • 35
  • 27
  • 0
  • 0
  • 0
期刊论文
Towards Entire-Carbon-Nanotube Circuits: The Fabrication of Single-Walled-Carbon-Nanotube Field-Effe
In situ comprehensive characterization of optoelectronic nanomaterials for device purposes
Deriving Carbon Atomic Chains from Graphene
Transverse dielectric properties of boron nitride nanotubes by ab initio electric field calculations
CdTe Quantum Dots-Sensitized TiO2 Nanotube Array Photoelectrodes
Large-scale and rapid synthesis of ultralong ZnO nanowire films via anodization
Y-Contacted High-Performance n-Type Single-Walled Carbon Nanotube Field-Effect Transistors: Scaling
An Efficient Method To Form Heterojunction CdS/TiO2 Photoelectrodes Using Highly Ordered TiO2 Nanotu
Y Microphotoluminescence study of exciton polaritons guided in ZnO nanorods
Visible Light Response of Unintentionally Doped ZnO Nanowire Field Effect Transistors
Almost Perfectly Symmetric SWCNT-Based CMOS Devices and Scaling
Measuring the electrical characteristics of individual junctions in the SnO2 capped ZnO nanowire arr
Quantitative analysis of current-voltage characteristics of semiconducting nanowires: Decoupling of
ZnSe nanobelts and nanowires synthesized by a closed space vapor transport technique
High-field electrical transport and breakdown behavior of double-walled carbon nanotube field-effect
CdS quantum dots sensitized TiO2 nanotube-array photoelectrodes
Grinding a nanotube
The field-emission and current-voltage characteristics of individual W5O14 nanowires
Quantitative study on the effect of surface treatments on the electric characteristics of ZnO nanowi
Angular dependent luminescence of individual suspended ZnO nanorods
Field-Emission Characteristics of Individual Carbon Nanotubes with a Conical Tip: The Validity of th
Hydrothermal Reaction Mechanism and Pathway for the Formation of K2Ti6O13 Nanowires
Quantitative fitting of nonlinear current-voltage curves and parameter retrieval of semiconducting n
REW - exit-wave reconstruction and alignments for focus-variation high-resolution transmission elect
多壁碳纳米管互连的单壁碳纳米管晶体管的频率特性
会议论文
Carrier injection switch and in-situ experiments
Structure, growth and modification of nanostructures made from layered metal oxides
In-situ fabrication, manipulation and property measurements on single nanotubes and nanowires with n
Controlled engineering of nanostructures with near atomic precision and their properties
In-situ fabrication, manipulation and property mearurements on single nanotubes and nanowires with n
In-situ fabrication, manipulation and property measurements on single nanotubes and nanowires with n
一维纳米材料的结构、生长和物性
Quantitative convergent beam diffraction and inversion
Development of ballistic n-type CNT based FETs and its implication for CMOS technology
Developments of carbon nanotube based doping free CMOS and optoelectronic devices
High performance carbon nanotube based CMOS and optoelectronics devices
Characterizing individual nanostructures: the structure and electrical, mechanical, and optical prop
Measuring and quantitatively analyzing the electrical characteristics of individual semiconducting n
Carbon nanotube materials: in-situ manipulation and potential for electronic devices
Carbon Nanotube Based Doping Free Ballistic CMOS Technology
后硅时代的电子学：从硅到碳
电镜和电子衍射
Field Effect and Photoelectronic Property of Nanodevices Made from Single Bi2S3 Nanowire
Quantitative analysis of current-voltage characteristics of semiconducting nanowires: decoupling the
Dynamical electron diffraction calculations via the optical potential method
C haracterizing Individual Nanostructures: Structure, Electrical, Mechanical and Optical Properties
后硅时代的纳米电子学：从硅到碳
单根碳纳米管的力学和电学特性原位研究
Characterizing Individual Nanostructures: Structure, Electrical, Mechanical and Optical Properties
CNT based doping-free ballistic CMOS devices
High performance carbon nanotube based doping free CMOS and optoelectronics devices
新型碳材料基础
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