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Investigations of junctionless nanowire transistors with non-uniform channel
所属机构名称:北京大学
会议名称:11th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (ICSICT)
时间:2012.11.11
成果类型:会议
相关项目:纳米FinFET器件的退化模型和失效机理研究
作者:
Yunxi Zhu|Haijun Lou|Binghua Li|Xinnan Lin|
同会议论文项目
纳米FinFET器件的退化模型和失效机理研究
期刊论文 4
会议论文 9
专利 2
同项目会议论文
An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold
Numerical study on the effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM perf
An Efficient Iterative Grid Selection Strategy for Time-Mapped Harmonic Balance Method
Characteristics of Subband Current Ratio in Double-Gate MOSFET
A Novel Approch to Simualte Fin-width Line Edge Roughness Effect on FinFETs
Investigations of Fin Vertical Nonuniformity Effects on Junctionless Multigate Transistor
Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity
Nonparabolicity Effects of The Ultra-thin Body Double-gate MOSFETs