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Nonparabolicity Effects of The Ultra-thin Body Double-gate MOSFETs
  • 所属机构名称：北京大学
  • 会议名称：NSTI-Nanotech 2011
  • 时间：2011
  • 成果类型：会议
  • 相关项目：纳米FinFET器件的退化模型和失效机理研究
作者： Haijun Lou, Yunxi Zhu, Lining Zhang, Xinnan Lin,|
同会议论文项目
纳米FinFET器件的退化模型和失效机理研究
期刊论文 4 会议论文 9 专利 2
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