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Characteristics of Subband Current Ratio in Double-Gate MOSFET
  • 所属机构名称：北京大学
  • 会议名称：IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
  • 时间：2010
  • 成果类型：会议
  • 相关项目：纳米FinFET器件的退化模型和失效机理研究
作者： Haijun Lou|Xinnan Lin, Lining Zhang, Frank He, Mansun Chan|
同会议论文项目
纳米FinFET器件的退化模型和失效机理研究
期刊论文 4 会议论文 9 专利 2
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