位置：成果数据库 > 会议 > 会议详情页
Gate Induced Resistive Switching in 1T1R Structure with Improved Uniformity and Better Data Retentio
  • 所属机构名称：中国科学院微电子研究所
  • 会议名称：IEEE 6th International Memory Workshop (IMW)
  • 时间：2014
  • 成果类型：会议
  • 相关项目：阻变存储器数据保持特性失效机理研究
作者： Lv, Hangbing|Xu, Xiaoxin|Liu, Ruoyu|Li, Ling|Liu, Qi|Long, Shibing|Wang, Yu|Huo, Zongliang|Liu, Ming|
同会议论文项目
阻变存储器数据保持特性失效机理研究
期刊论文 8 会议论文 6
同项目会议论文
Study of One Dimension Thickness Scaling on Cu/HfOx/Pt Based RRAM Device Performance
Understanding the Failure Mechanism of HfO2 Based ECM Device
Gate Induced Resistive Switching in 1T1R Structure with Improved Uniformity and Better Data Retentio
A new method to decrease the power consumption in 1T1R RRAM device
On the Origin of Failure Mechanism of Endurance and Retention of HfO2 based ECM Cells