位置：成果数据库 > 会议 > 会议详情页
Gate Induced Resistive Switching in 1T1R Structure with Improved Uniformity and Better Data Retentio
  • 所属机构名称：中国科学院微电子研究所
  • 会议名称：4th Annual World Congress of Nano Science & Technology (Nano S&T)
  • 时间：2014
  • 成果类型：会议
  • 相关项目：阻变存储器数据保持特性失效机理研究
作者： Lv, Hangbing|Xu, Xiaoxin|Liu, Hongtao|Liu, Ming|
同会议论文项目
阻变存储器数据保持特性失效机理研究
期刊论文 8 会议论文 6
同项目会议论文
Study of One Dimension Thickness Scaling on Cu/HfOx/Pt Based RRAM Device Performance
Understanding the Failure Mechanism of HfO2 Based ECM Device
A new method to decrease the power consumption in 1T1R RRAM device
Gate Induced Resistive Switching in 1T1R Structure with Improved Uniformity and Better Data Retentio
On the Origin of Failure Mechanism of Endurance and Retention of HfO2 based ECM Cells