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Understanding the Failure Mechanism of HfO2 Based ECM Device
  • 所属机构名称：中国科学院微电子研究所
  • 会议名称：1st China-Japan-Korea RRAM and Functional Oxide Workshop
  • 时间：2014
  • 成果类型：会议
  • 相关项目：阻变存储器数据保持特性失效机理研究
作者： Lv, Hangbing|Xu, Xiaoxin|Liu, Hongtao|Liu, Ruoyu|Li, Ling|Liu, Qi|Long, Shibing|Liu, Ming|
同会议论文项目
阻变存储器数据保持特性失效机理研究
期刊论文 8 会议论文 6
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