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Response Linearity and Time Drift of Polysilicon Nanofilm Resistance for Piezoresistive Effect
  • 所属机构名称：哈尔滨工业大学
  • 会议名称：2nd IEEE International Nanoelectronics Conference
  • 成果类型：会议
  • 会场：Shanghai, PEOPLES R CHINA
  • 相关项目：多晶硅纳米膜压阻式压力传感器研究
作者： Shi Changzhi|Liu Xiaowei|Chen Weiping|Li Jinfeng|Chuai Rongyan|
同会议论文项目
多晶硅纳米膜压阻式压力传感器研究
期刊论文 18 会议论文 6 专利 1
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DC electrical trimming characteristics of polysilicon nanofilms with different doping concentrations
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Piezoresistive Linearity Analysis of Polysilicon Nanofilms Deposited at Different Temperatures Based
Temperature Characteristics of Polysilicon Piezoresistive Nanofilm Depending on Film Structure
Analysis of Tunneling Piezoresistive Effect of P-type Polysilicon Nanofilms