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CopperPumping of Through Silicon Vias in Reliability Test
所属机构名称:中国科学院微电子研究所
会议名称:2015 The 16th International Conference on Electronic Packaging Technology (ICEPT)
时间:2015.8.11
成果类型:会议
相关项目:面向高密度三维集成的玻璃等离子体深刻蚀技术研究
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面向高密度三维集成的玻璃等离子体深刻蚀技术研究
期刊论文 2
会议论文 8
同项目会议论文
Dry Etching of Fused Silica Glass in C4F8/Ar Inductively Coupled Plasmas for Through Glass Via (TGV)
Investigation of temporary bonding and release processes for TSV with copper pillar bumps
Thermalmechanical behavior of TSVs with WN/Ni as barrier/seed layer system for 2.5Dintegration
Effectof pre-CMP annealing on TSV pumping in thermal budget and reliability test
Investigation of silicon stress around through silicon vias by high efficiency micro-Raman microscop
Effect of Thermal Annealing on TSV Cu Protrusion and Local Stress
Effectof annealing after copper plating on the pumping behavior of through siliconvias