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Ultra-low Specific On-resistance SOI High Voltage Trench LDMOS with Dielectric Field Enhancement Bas
  • 所属机构名称：电子科技大学
  • 会议名称：The 25th International Symposium on Power Semiconductor Devices & ICs
  • 时间：2013
  • 成果类型：会议
  • 相关项目：高速高压IGBT瞬态抽出模型与新结构
作者： Li,Zhaoji|Qiao,Ming|Wu,Lijuan|Ye,Ke|Wang,Zhuo|Wang,Zhigang|Luo,Xiaorong|Zhang,Sen|Su,Wei|
同会议论文项目
高速高压IGBT瞬态抽出模型与新结构
期刊论文 12 会议论文 7 专利 15
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