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A 300 v thin layer SOI nLDMOS based on RESURF and MFP
  • 所属机构名称：电子科技大学
  • 会议名称：2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 201
  • 时间：2012
  • 成果类型：会议
  • 相关项目：高速高压IGBT瞬态抽出模型与新结构
作者： Zhang, Bo|Xu, Wan|Chen, Tao|Zhou, Xin|Zhao, Yuanyuan|Chen, Zhengcai|Zhou, Miao|Qiao, Ming|Xiao, Zhiqiang|
同会议论文项目
高速高压IGBT瞬态抽出模型与新结构
期刊论文 12 会议论文 7 专利 15
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