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Temperature effect on the growth and microstructure of Er2O3 films on Ge substrates
  • 所属机构名称：复旦大学
  • 会议名称：7th Internation Conference on Si Epitaxy and Heterostructure (ICSI-7)
  • 成果类型：会议
  • 会场：Leuven
  • 相关项目：在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
作者： Zhenyang Zhong|Tianxiao Nie|Yongliang Fan|Ting Ji|Zuimin Jiang|Zebo Fang|
同会议论文项目
在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
期刊论文 9 会议论文 9
同项目会议论文
Hall resistivity of Fe doped Si film at low temperatures
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高k材料异质外延生长、微结构及其物理特性
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Strain effects in Si capping layers grown on SiGe nanoislands
Single crystalline Tm2O3 film grown on Si (100) by atomic oxygen assisted molecular beam epitaxy