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Growth and characterization of ordered GeSi QDs on patterned substrates via NSL
  • 所属机构名称：复旦大学
  • 会议名称：7th Internation Conference on Si Epitaxy and Heterostructure (ICSI-7)
  • 成果类型：会议
  • 会场：Leuven
  • 相关项目：在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
作者： Jian Cui|Zuimin Jiang|Yingjie Ma|Zhenyang Zhong|
同会议论文项目
在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
期刊论文 9 会议论文 9
同项目会议论文
Hall resistivity of Fe doped Si film at low temperatures
Growth and characterization of ferroelectric a-MnO2 film on Si (100)
Controllable growth of self-assembled GeSi quantum dots on Si(001) substrates
高k材料异质外延生长、微结构及其物理特性
Formation of nanopits in Si capping layers on SiGe quantum dots
Strain effects in Si capping layers grown on SiGe nanoislands
Single crystalline Tm2O3 film grown on Si (100) by atomic oxygen assisted molecular beam epitaxy
Temperature effect on the growth and microstructure of Er2O3 films on Ge substrates