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The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245G
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：0
  • 页码：1614-1617
  • 语言：英文
  • 相关项目：AlGaN/GaN异质结构中二维电子气的量子输运性质
作者： Lin Fang|Huang Sen|Yao Jian-Quan|Wang Tao|Xu Fu-Jun|Ma Nan|Shen Bo|Liu Fang|Wang Peng|
同期刊论文项目
AlGaN/GaN异质结构中二维电子气的量子输运性质
期刊论文 48
同项目期刊论文
Influence of the illumination on the subband structure and occupation in Al (x) Ga1-x N/GaN heterost
氢化作用对低能电子束辐照下GaN发光演变的影响
Strain effects on InxAl1-xN crystalline quality grown on GaN templates by metalorganic chemical vapo
Ni diffusion and its influence on electrical properties of AlxGa1-xN/GaN heterostructures
Morphology and microstructure evolution of AlxGa1-xN epilayers grown on GaN/sapphire templates with
In气氛下晶体生长对Mg掺杂p-AlxGa1-xN激活能的影响
GaN基p-i-n型雪崩探测器的制备与表征
Transmission electron microscopy investigation of inversion domain boundary in Al0.65Ga0.35N grown o
The origin and evolution of V-defects in InxAl1-xN epilayers grown by metalorganic chemical vapor de
Temperature dependence of the specific resistance in Ti/Al/Ni/Au Ohmic contacts on (NH4)(2)S-x treat
Lattice polarity detection of InN by circular photogalvanic effect
Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in AlxGa1
AlxGa1-xN／GaN异质结构中二维电子气的自旋性质
AlxGa1-xN/GaN异质结构中2DEG的塞曼自旋分裂
Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical A1N/GaN coupled double quantum wells
Scattering behaviour of a two-dimensional electron gas induced by Al composition fluctuation in AlxGa1-xN barriers in AlxGa1-xN/GaN heterostructures
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406