Influence of the illumination on the subband structure and occupation in Al (x) Ga1-x N/GaN heterost
- ISSN号:0947-8396
- 期刊名称:Applied Physics A-Materials Science & Processing
- 时间:0
- 页码:953-957
- 语言:英文
- 相关项目:AlGaN/GaN异质结构中二维电子气的量子输运性质
作者:
Shen, Bo|Tang, Ning|Zhou, Wen-Zheng|He, Xiao-Wei|Yin, Chun-Ming|Chu, Jun-Hao|Shang, Li-Yan|Zhang, Guo-Yi|Han, Kui|Qin, Zhi-Xin|Yang, Zhi-Jian|Lin, Tie|