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Influence of the illumination on the subband structure and occupation in Al (x) Ga1-x N/GaN heterost
  • ISSN号：0947-8396
  • 期刊名称：Applied Physics A-Materials Science & Processing
  • 时间：0
  • 页码：953-957
  • 语言：英文
  • 相关项目：AlGaN/GaN异质结构中二维电子气的量子输运性质
作者： Shen, Bo|Tang, Ning|Zhou, Wen-Zheng|He, Xiao-Wei|Yin, Chun-Ming|Chu, Jun-Hao|Shang, Li-Yan|Zhang, Guo-Yi|Han, Kui|Qin, Zhi-Xin|Yang, Zhi-Jian|Lin, Tie|
同期刊论文项目
AlGaN/GaN异质结构中二维电子气的量子输运性质
期刊论文 48
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