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Morphology and microstructure evolution of AlxGa1-xN epilayers grown on GaN/sapphire templates with
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：7658-7662
  • 语言：英文
  • 相关项目：AlGaN/GaN异质结构中二维电子气的量子输运性质
作者： Yang, Z. J.|Qin, Z. X.|Xu, F. J.|Yu, D. P.|Xu, J.|Zhang, G. Y.|Lu, L.|Zhang, X. P.|Huang, S.|Miao, Z. L.|Gao, B.|Shen, B.|
同期刊论文项目
AlGaN/GaN异质结构中二维电子气的量子输运性质
期刊论文 48
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