位置：成果数据库 > 期刊 > 期刊详情页
Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on
  • ISSN号：0018-9499
  • 期刊名称：IEEE Transactions on Nuclear Science
  • 时间：2015.4
  • 页码：555-564
  • 相关项目：双极晶体管电离和位移协同效应特征及机理研究
作者： Li, Xingji|Liu, Chaoming|Yang, Jianqun|Ma, Guoliang|
同期刊论文项目
双极晶体管电离和位移协同效应特征及机理研究
期刊论文 24
同项目期刊论文
Radiation damage induced by various particles on CC4013 devices
Synergistic Effect of Ionization and Displacement Defects in N PN Transistors Induced by 40-MeV Si I
Separation of Interface Traps and Oxide Charge in Ionization Damaged Silicon Bipolar Transistors Bas
Separation of ionization traps in NPN transistors irradiated by lower energy electrons
Effect of ionizing radiation on dual 8-bit analog-to-digital converters (AD9058) with various dose r
Equivalence of displacement radiation damage in superluminescent diodes induced by protons and heavy
Radiation defects studies on silicon bipolar junction transistor irradiated by Br ions and electrons
Radiation induced deep level defects in bipolar junction transistorsunder various bias conditions
Evolution of Deep Level Centers in NPN Transistors Following 35 MeV Si Ion Irradiations With High Fl
Separation of Ionization Traps in NPN Transistors Irradiated by Lower Energy Electrons (vol 60, pg 3
Synergistic Effect of Ionization and Displacement Damage in NPN Transistors Caused by Protons With V
The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors
偏置条件对NPN及PNP双极晶体管电离辐射损伤的影响研究
Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br
Annealing effects and DLTS study on NPN silicon bipolar junction transistors irradiated by heavy ion
Bias dependence of synergistic radiation effects induced by electrons and protons on silicon bipolar
晶粒尺寸对1 MeV电子在金属Ni中能量沉积的影响
氢气气氛下横向PNP晶体管电离损伤行为