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Radiation induced deep level defects in bipolar junction transistorsunder various bias conditions
  • ISSN号：0168-583X
  • 期刊名称：Nuclear Instruments and Methods in Physics Researc
  • 时间：2015.7.24
  • 页码：247-251
  • 相关项目：双极晶体管电离和位移协同效应特征及机理研究
作者： 李兴冀|
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双极晶体管电离和位移协同效应特征及机理研究
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