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Radiation defects studies on silicon bipolar junction transistor irradiated by Br ions and electrons
  • ISSN号：0168-583X
  • 期刊名称：Nuclear Instruments and Methods in Physics Researc
  • 时间：2015.8.21
  • 页码：244-246
  • 相关项目：双极晶体管电离和位移协同效应特征及机理研究
作者： 李兴冀|
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双极晶体管电离和位移协同效应特征及机理研究
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