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Organic Programmable Resistance Memory Device Based on Au/Alq(3)/gold-nanoparticle/Alq(3)/Al Structu
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2011.8.8
  • 页码：1140-1142
  • 相关项目：有机场效应晶体管驱动分子存储器单元的制备及其性能表征
作者： Liu, Xin Ji, Zhuoyu Shang, Liwei Wang, Hong Chen,|
同期刊论文项目
有机场效应晶体管驱动分子存储器单元的制备及其性能表征
期刊论文 13
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