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Advancements in organic nonvolatile memory devices
  • ISSN号：1001-6538
  • 期刊名称：科学通报(英文版)
  • 时间：2011.10.10
  • 页码：3178-3190
  • 分类：TP333[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术] TB852.1[一般工业技术—摄影技术]
  • 作者机构：[1]Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China, [2]School of Electronic and Information Engineering, Anhui University, Hefei 230039, China
  • 相关基金：This work was supported by the National Basic Research Program of China （2011CB808404, 2009CB939703） and the National Natural Science Foundation of China （60825403, 90607022, and 61001043）.
  • 相关项目：有机场效应晶体管驱动分子存储器单元的制备及其性能表征
作者： Liu Xin Ji ZhuoYu Liu Ming Shang LiWei Li DongMei|
关键词： 非易失性存储器, 设备, 存储介质, 记忆体, 候选人, 工业界, 学术界, 商品化, organic memory, two-terminal memory devices, organic thin-film transistors, integration, multilevel effect
中文摘要：

作为下一代存储媒介的最有希望的候选人之一，器官的记忆设备在学术界和工业引起了世界范围的研究兴趣。在最近的年里，器官的记忆经历了快速的进步。我们以结构，特征，使用的材料，和集成考察器官的抵抗切换记忆的发展。一些基本概念被讨论，以及妨碍开发的障碍和器官的存储器设备的可能的商品化。

英文摘要：

As one of the most promising candidates for next generation storage media, organic memory devices have aroused woddwide research interest in both academia and industry. In recent years, organic memories have experienced rapid progress. We review the development of organic resistive switching memories in terms of structure, characteristics, materials used, and integration. Some basic concepts are discussed, as well as the obstacles hindering the development and possible commercialization of organic memory devices.

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