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有机非挥发性存储器的研究进展
  • ISSN号：0023-074X
  • 期刊名称：Chinese Science Bulletin
  • 时间：2011.9.9
  • 页码：2298-2310
  • 分类：TP333.52[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术]
  • 作者机构：[1]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029, [2]安徽大学电子信息与工程学院,合肥230039
  • 相关基金：国家重点基础研究发展计划（2011CB808404,2009CB939703）和国家自然科学基金（61001043,60825403）资助项目
  • 相关项目：有机场效应晶体管驱动分子存储器单元的制备及其性能表征
作者： 刘欣|姬濯宇|刘明|商立伟|李冬梅|代月花|
关键词： 有机存储器件, 交叉线存储器件, 有机薄膜晶体管集成, 多值效应
中文摘要：

有机存储器在未来存储器应用中具有非常光明的前景,因此在学术界和工业界均引起广泛的研究兴趣.近几年来,有机存储器在材料、器件性能及电路集成方面都取得了飞速的发展.本文从器件结构、性能、所用材料与集成等方面,综述了有机存储器的最新研究进展,同时讨论了阻碍有机存储器发展及其商业化应用的原因.

同期刊论文项目
纳米加工与新型半导体器件研究
期刊论文 101 会议论文 13 获奖 2 专利 121
有机场效应晶体管驱动分子存储器单元的制备及其性能表征
期刊论文 13
同项目期刊论文
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Interface Effect on the Performance of Rectifier Based on Organic Diode
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Multilevel resistive switching with ionic and metallic filaments
Effect of high temperature annealing on the performance of MANOS charge trapping memory
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自支撑透射光栅的设计、制作和测试
Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-kap
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基于有机场效应晶体管的非挥发性存储器研究进展
A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application
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Improving the electrical performance of resistive switching memory using doping technology
3D Integration of CMOL Structures for FPGA Applications
Improvement of Resistive Switching Uniformity in TiO(x) Films by Nitrogen Annealing
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Resistive switching mechanism of Ag/ZrO(2):Cu/Pt memory cell
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Improvement of Resistive Switching Properties in ZrO2-Based ReRAM With Implanted Ti Ions
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Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switc
Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge
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Comparison of tunneling current assisted by neutral and positive traps with finite ranged core-poten
Analysis and modeling of resistive switching statistics
Investigation of One-Dimensional Thickness Scaling on Cu/HfOx/Pt Resistive Switching Device Performa
Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices
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Study of top and bottom contact resistance in one organic field-effect transistor
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Investigation of resistive switching behaviours in WO3-based RRAM devices
Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer
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Nonvolatile nano-crystal floating gate OFET memory with light assisted program
Low-Voltage Multilevel Memory Based on Organic Thin-Film Transistor
Threshold Voltage Tuning of Low-Voltage Organic Thin-Film Transistors
Phototransistors and photoswitches from an ultra-closely π-stacked organic semiconductor
Organic Programmable Resistance Memory Device Based on Au/Alq(3)/gold-nanoparticle/Alq(3)/Al Structu
Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer
Phototransistors and Photoswitches From an Ultraclosely pi-Stacked Organic Semiconductor
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Contact-Length-Dependent Contact Resistance of Top-Gate Staggered Organic Thin-Film Transistors
期刊信息
  • 《科学通报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国科学院
  • 主编：周光召
  • 地址：北京东黄城根北街16号
  • 邮编：100717
  • 邮箱：csb@scichina.org
  • 电话：010-64036120 64012686
  • 国际标准刊号：ISSN：0023-074X
  • 国内统一刊号：ISSN：11-1784/N
  • 邮发代号:80-213
  • 获奖情况:
  • 首届国家期刊奖,中国期刊方阵“双高”期刊,第三届中国出版政府奖
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  • 被引量:81792