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Contact-Length-Dependent Contact Resistance of Top-Gate Staggered Organic Thin-Film Transistors
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2012.12.12
  • 页码：69-71
  • 相关项目：有机场效应晶体管驱动分子存储器单元的制备及其性能表征
作者： 王宏|李泠|姬濯宇|陆丛研|郭经纬|王龙|刘明|
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有机场效应晶体管驱动分子存储器单元的制备及其性能表征
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