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中文摘要：
结合金属纳米颗粒辅助化学刻蚀法制备Si纳米线和低压化学气相外延自组织生长Ge纳米点制备了Ge纳米点/Si纳米线复合结构,采用电子显微镜、微区原子力/拉曼联合测试系统进行了微结构表征。Ge纳米点基本均匀地分布于Si纳米线上,通过改变生长参数可有效控制Ge纳米点的尺寸和密度。在非常扁薄的无支撑的纳米点/线复合结构中,由于应力和热效应的作用使Si和Ge的拉曼散射特征峰发生了较大的红移。
英文摘要：
Ge nanodot/Si nanowire composite structures were fabricated by combining metal-particle-assisted chemical etching and low pressure chemical vapor deposition,and the microstructures were characterized by SEM,TEM and an united test system of AFM and micro-Raman.SEM and TEM results observed that Ge nanodots uniformly distributed over the whole surface of the Si nanowire.The size and density of Ge nanodots could be controlled by the growth parameters.Micro-Raman demonstrated that the feature peaks of Si and Ge for the individual mesostructure wire,which is extremely shallow and thin,had a large redshift due to the strain and temperature effects.
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