中文摘要：

基于蓝宝石衬底InAlN/GaN异质结材料研制具有高电流增益截止频率（f_T）和最大振荡频率（f_（max））的InAlN/GaN异质结场效应晶体管（HFETs）.基于再生长n＋GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距（Lsd）缩小至600nm.此外,采用自对准栅工艺制备60nmT型栅.由于器件尺寸的缩小,在Vgs=1V时,器件最大饱和电流（Ids）达到1.89A/mm,峰值跨导达到462mS/mm.根据小信号测试结果,外推得到器件的f_T和f_（max）分别为170GHz和210GHz,该频率特性为国内InAlN/GaNHFETs器件频率的最高值.

英文摘要：

Scaled InAlN/GaN heterostructure field-effect transistors （HFETs） on sapphire substrate with high unity current gain cut-off frequency （fT） and maximum oscillation frequency （fm,x） were fabricated and characterized. In the device, scaled source-to-drain distance （ Lsd ） of 600 nm was realized by employing nonalloyed regrown n ＋ - GaN Ohmic contacts. Moreover, a 60-nm T-shaped gate was fabricated by self-aligned-gate technology. A high drain saturation current density （lds） of 1.89 A/mm @ Vgs = 1 V and a peak extrinsic transconductance （ gm ） of 462 mS/mm were obtained in the scaled InA1N/GaN HFETs. In addition, from the small-signal RF measurements, the values offT andfmax for the device with 60-nm gate were extrapolated to be 170 GHz and 210 GHz at the same bias. To our knowledge, they are the highest values of fr and fmax for the domestic InA1N/GaN HFETs.