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Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN385[电子电信—物理电子学]
  • 作者机构：河北半导体研究所专用集成电路国家级重点实验室,河北石家庄050051
  • 相关基金：Supported by the National Natural Science Foundation of China （61306113）
作者： 吕元杰[1], 冯志红[1], 顾国栋[1], 敦少博[1], 尹甲运[1], 王元刚[1], 徐鹏[1], 韩婷婷[1], 宋旭波[1], 蔡树军[1], 栾崇彪[2], 林兆军[2]
关键词： ALGAN/GAN, 异质结场效应晶体管, 电流增益截止频率, 最大振荡频率, 再生长欧姆接触, AlGaN/GaN, HFET, fT ,fmax, regrown Ohmic contacts
中文摘要：

基于SiC衬底AlGaN/GaN异质结材料研制具有高电流增益截止频率（fT）和最大振荡频率（fmax）的AlGaN/GaN异质结场效应晶体管（HFETs）.基于MOCVD外延n^＋GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距（Lsd）缩小至600 nm.此外,采用自对准工艺制备了60 nm T型栅.由于器件尺寸的缩小,在Vgs=2 V下,器件最大饱和电流（Ids）达到2.0 A/mm,该值为AlGaN/GaN HFETs器件直流测试下的最高值,器件峰值跨导达到608 mS/mm.小信号测试表明,器件fT和fmax最高值分别达到152 GHz和219 GHz.

英文摘要：

Scaled AlGaN/GaN heterostructure field-effect transistors （HFETs） with a high unity current gain cut- off frequency （fT） and maximum oscillation frequency （fmax） were fabricated and characterised on an SiC substrate. In the device, the source-to-drain distance （Lsd） was scaled to 600 nm using regrown n^＋ -GaN Ohmic contacts. In addition, a 60-nm T-shaped gate was fabricated by self-aligned-gate technology. A recorded drain saturation current density （ Ids ） of 2.0 A/mm at Vgs = 2 V and a peak extrinsic transconductance （gm ） of 608 mS/mm were obtained in the scaled AlGaN/GaN HFETs. Moreover, in the devices with a 60-nm T-shaped gate, the maximum values of fT and fmax reached 152 and 219 GHz, respectively.

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406