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Top electrode-dependent resistance switching behaviors of Lanthanum-doped ZnO film memory devices
  • ISSN号：0947-8396
  • 期刊名称：Applied Physics A-Materials Science & Processi
  • 时间：0
  • 页码：-
  • 相关项目：LCMO/BNT磁电超晶格复合薄膜与磁电耦合效应调制
作者： 唐明华|
同期刊论文项目
LCMO/BNT磁电超晶格复合薄膜与磁电耦合效应调制
期刊论文 40
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