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Surface-potential-based drain current model for long-channel junctionless double-gate MOSFETs
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2012.11.11
  • 页码：3292-3298
  • 相关项目：LCMO/BNT磁电超晶格复合薄膜与磁电耦合效应调制
作者： 唐明华|
同期刊论文项目
LCMO/BNT磁电超晶格复合薄膜与磁电耦合效应调制
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