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Modeling of strain effects on the device behaviors of ferroelectric memory field-effect transistors
  • ISSN号：0268-1242
  • 期刊名称：Semiconductor Science and Technology
  • 时间：2013.6.6
  • 页码：082001-082001
  • 相关项目：LCMO/BNT磁电超晶格复合薄膜与磁电耦合效应调制
作者： 唐明华|
同期刊论文项目
LCMO/BNT磁电超晶格复合薄膜与磁电耦合效应调制
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