位置：成果数据库 > 期刊 > 期刊详情页
Microstructures, phase transition and piezoelectric properties of cerium-substituted bismuth titanat
  • ISSN号：0361-5235
  • 期刊名称：Journal of Electronic Materials
  • 时间：2012.3.3
  • 页码：651-655
  • 相关项目：LCMO/BNT磁电超晶格复合薄膜与磁电耦合效应调制
作者： 唐明华|
同期刊论文项目
LCMO/BNT磁电超晶格复合薄膜与磁电耦合效应调制
期刊论文 40
同项目期刊论文
Structural and electrical characterizations of Bi(Zn0.5Ti0.5)O3 doped lead zirconate titanate ferroe
Enhanced magnetoelectric effect in La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 multiferroic nanocomposite film
Scaling-induced enhancement of X-rays luminescence in CsI(Na) crystals
Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO3 thin ?lms
Effect of doping concentration of substrate silicon on retention characteristics in metal-ferroelect
Proton radiation damage in SrTiO3 thin film by computer simulation
Temperature dependence of magnetoelectric effect in Bi3.15Nd0.85Ti3O12-La0.7Ca0.3MnO3 multiferroic c
The influence of ferroelectric-electrode interface layer on the electrical characteristics of negati
Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect
Electrical properties and X-ray photoelectron spectroscopy studies of Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.
Top electrode-dependent resistance switching behavior of ZnO thin films deposited on Pt/Ti/SiO2/Si s
Magnetoelectric coupling in La0.6Ca0.4MnO3-Bi0.6Nd0.4TiO3 composite thin films derived by a chemical
Surface-potential-based drain current model for long-channel junctionless double-gate MOSFETs
Large memory window and good retention characteristics of ferroelectric-gate field effect transistor
Factors for the polarization lifetime in metal-ferroelectric-insulator-semiconductor capacitors
Influence of pyrolysis temperature on ferroelectric properties of La and Mn co-doped BiFeO3 thin fil
Effects of applied bias voltage in tunnel junctions with ferroelectric barrier
Magnetoelectric Pb(Zr0.52Ti0.48)O-3-La0.65Sr0.35MnO3 composite thin films derived by the pulse laser
Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films
Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric fiel
Bipolar resistive switching behaviors in Cr-doped ZnO films
Magnetoelectric Bi3.25Nd0.75Ti3O12-La0.6Ca0.4MnO3 composite thin films derived by SOL-GEL method
Electrical properties of La0.6Ca0.4MnO3-Bi3.4Nd0.6Ti3O12 thin films derived by a sol-gel process
Resistive switching properties of sol-gel derived V-doped SrTiO3 thin films
Improvement of resistive switching performances in ZnLaO film by embedding a thin ZnO buffer layer
Modeling of strain effects on the device behaviors of ferroelectric memory field-effect transistors
Radiation damage effects by molecular dynamics simulation in BaTiO3 ferroelectric crystal
Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric
Simulation of multi-level polarization in ferroelectric tunnel junctions
Top electrode-dependent resistance switching behaviors of Lanthanum-doped ZnO film memory devices
Microstructure, magnetoelectric properties and leakage mechanisms of La0.7Ca0.3MnO3/Bi3.15Nd0.85TiO3
热解温度对镧、锰共掺杂铁酸铋薄膜铁电性能的影响（英文）
Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation