中文摘要：

基于气液固（VLS）反应机制，采用厚度为2～3nm的金属镍作为催化剂，金属镓和氨气分别用作Ⅲ族和Ⅴ族的生长源，在自行改造的化学气相沉积（CVD）设备内获得了大面积GaN纳米线。通过扫描电镜（SEM）、能量分散X射线荧光（EDX）谱和透射电镜（TEM）测试，表明GaN纳米线的成核及生长与反应室气路结构有密切关系，水平弯管式气路将有利于GaN纳米线的生长。此外，生长气流将直接影响GaN纳米线的生长状况，生长温度为920℃、NH3和N2的气流量分别为100和500cm^3／min时，可以获得形貌较好的纳米线。同时，探索了Ga源与样品位置间的距离对纳米线中Ga和N的质量分数的影响，并分析了其影响机理。

英文摘要：

Based on the vapor liquid solid （VLS） reaction mechanism, GaN nanowires in large areas were obtained by using the self-reformed chemical vapor deposition （CVO） equipment, with the 2-3 nm Ni, the metal Ga and Nz as the catalyst and growth source, respectively. By using the scanning electron microscopy （SEM）, energy dispersive X-ray fluorescence （EOX） spectroscopy and transmission electron microscopy （ TEM）, the results show that the nucleation and growth of .GaN nanowires are closely related to the structure of gas path, as well as horizontal bending pipe gas path will be conducive to the growth of GaN nanowires. In addition, the growth of GaN nanowires would be directly affected by the gas flow. A well-shaped GaN nanowires could be obtained at the growth temperature of 920 ＂C with 100 cm3/min NH3 and 500 cm3/min Nz as the gas flow, respectively. Finally, the effect of the distance between the sample and the Ga source on ratio of Ga and N was explored, and analyzes the mechanism of its effects.