中文摘要：

报道了在蓝宝石衬底上制备CeO2缓冲层的原位双温工艺法及其对Tl2Ba2CaCu2O8（Tl-2212）薄膜超导特性的影响.XPS和AFM测试结果表明,采用原位双温工艺法制备缓冲层,具有工艺简单,薄膜表面光滑,衬底材料原子扩散量少等特点.在先驱膜的高温后退火过程中,40nm厚的CeO2薄膜就能有效地阻挡衬底材料对超导薄膜底层的扩散.随后制备厚度为530nm的Tl-2212超导薄膜具有优越的电学性能,其临界温度达到108.2K,临界电流密度达到6.58MA/cm2（77K,0T）,微波表面电阻只有185μΩ（77K,10GHz）,超导薄膜的主要特性参数得到显著提高.

英文摘要：

The preparation of CeO2 buffer layers on r-cut sapphire substrates by in situ two-temperature process and Tl-2212 superconducting films has been studied. The results of XPS and AFM show that this simple process of growing buffer layer produces CeO2 film with smooth surface, which can hold back the diffusion of Al from sapphire into Tl-2212 film. The 530 nm thick Tl-2212 films grown on the CeO2 buffer layers subsequently possess excellent electrical property. The films have a high transition temperature （Tc =108.2 K）, a high critical current density （Jc=6.58 MA/cm2at 77 K and zero applied magnetic field） and a low surface resistance （Rs=185 μΩ at 10 GHz and 77 K）, and their superconductivity can be improved significantly.