中文摘要：

本文报道了在（001）掺钇氧化锆（YSZ）基片上生长高质量CeO2缓冲层和Tl-2212超导薄膜的制备方法,以及不同厚度的超导薄膜对其特性的影响。XRD和SEM测试表明,在经过合适条件退火的基片和CeO2缓冲层上,所生长的Tl-2212薄膜具有致密的晶体结构、优良的面内和面外取向。最佳样品的临界转变温度（Tc）和临界电流密度为（Jc）可以分别达到107.5 K和4.24 MA/cm2（77 K,0 T）。实验结果表明,采用该工艺所制备的不同厚度Tl-2212超导薄膜的主要指标能满足开发多种超导器件的要求。

英文摘要：

CeO2 buffer layers with high quality and Tl-2212 superconducting films were prepared on（001） yttrium stabilized zirconia（YSZ） substrates,and the effect of the thickness of Tl-2212 films on its superconductivity have been studied.The XRD and SEM measurements showed that through annealing of YSZ substrates and CeO2 films under suitable annealing conditions,the Tl-2212 films possess excellent in-plane and out-of plane orientation,and condense crystal structure.The best film reaches a critical temperature of about 107.5 K and a critical current density as high as 4.24 MA/cm2（77 K,0 T）.The experiment results show that the different thickness of Tl-2212 films prepared by the process meet the fabrication of high temperature superconducting devices.