ADP晶体{100}面族生长的实时与非实时AFM(Atomic Force Microscopy)研究表明,其相变驱动力为0.01-0.04kT/ωs时,ADP晶体(100)面的平均面粗糙度和均方面粗糙度均不到0.3 nm,小于该晶面间距0.75 nm,微观结构表现为光滑界面,与夫兰克模型、特姆金模型相符,并观测到螺位错生长;在相变驱动力为0.053-0.11kT/ωs时,ADP晶体的(100)面的平均面粗糙度和均方面粗糙度介于1.8-4.2 nm,大于该晶面间距0.75 nm,微观结构粗糙度增加,趋向于粗糙界面,可用特姆金的弥散界面模型解释,界面上观测到多二维核生长。
In situ and ex situ atomic force microscopy observation has been used to investigate {100} surfaces microstructure of ADP crystal.The results show that both crystal surface average roughness Ra and mean square root RMS are less than 0.3 nm which is less than the interplanar distances of(100) 0.75 nm,the microstructure of interfaces is characteristic of smoothness when phase transition drive force is within 0.01-0.04kT/ωs,which is agree with the model theory from Frank、Temkin,screw dislocation growth is observed.The crystal surface average roughness Ra and mean square root RMS are within 1.8-4.2 nm,they are larger than the interplanar distances of(100) of 0.75 nm,surface microstructure becomes rough when phase transition drive force is within 0.053-0.11kT/ωs,which is agree with the model theory from Temkin,multi-2D nucleation growth is observed.