以甲苯(C7H8)和四甲基硅烷(Si(CH3)4)的混合气体为反应气源,使用离子气相沉积技术制备了不同Si含量(原子比)(不超过20%)的掺硅类金刚石(Si-DLC)薄膜,用X射线光电子谱和拉曼光谱测出薄膜和对磨钢球上转移膜的微观结构,纳米压痕仪、摩擦试验机和电子探针微分析仪分别得到薄膜的硬度、摩擦系数、磨痕和转移膜的元素变化结果。结果表明,添加少量Si能提高Si-DLC薄膜的硬度,但是Si含量的进一步增加则使薄膜的硬度降低。而薄膜的摩擦系数始终随着Si含量的增加而减少。从摩擦实验后钢球表面转移膜的进一步分析,我们认为该薄膜的低摩擦特性是由于转移膜的增加和石墨化两者共同造成的结果。
The amorphous hydrogenated diamond-like carbon(DLC) films,doped with different silicon contents,were grown by ionic gas deposition with a gaseous mixture of toluene(C7H8) and tetramethylsilane(TMS,Si(CH3)4).The impacts of the growth conditions,including the ratio of toluene and TMS,gas flow rate,and pressure,on properties of the films were studied.The microstructures and mechanical properties of the Si-doped DLC(Si-DLC) films were characterized with X-ray photoelectron spectroscopy,scanning electron microscopy,Raman spectroscopy and conventional mechanical probe analyzer.The results show that Si-doping significantly improves the mechanical properties of the films.For instance,an increase of small amount of silicon content enhances the surface hardness of the Si-DLC film.But as the Si content increases,both its surface hardness and its friction coefficient decrease.We suggest that graphitization and interaction of the transter films possibly account for the decrease of friction.