中文摘要：

接近式紫外光刻中光刻胶图形形状失真是影响基于紫外光刻工艺的大深宽比微结构质量的重要因素之一。为把握其规律，并探寻减小光刻胶模型形状失真的对策，利用部分相干光理论建立光刻理论模型，计算光刻胶表面的光强分布及变化规律，模拟得到的光刻胶图形轮廓明显地呈现拐角圆化和直边带毛刺等畸变现象。提出一种应用遗传算法的误差预补偿方法，在掩模图形的设计阶段，调整引起衍射的掩模特征形状以实现光刻胶表面的衍射光场调制，并根据光刻胶曝光轮廓特点，提出一种分段分类的思想，设计评价策略，减小问题的求解空间，实现了掩模设计图形的快速优化。结果表明优化补偿后的掩模图形降低了衍射造成的曝光图形的形状失真程度，图形质量得到了显著改善。该研究为提高接近式紫外光刻精度提供了一种新的思路。

英文摘要：

Improving graphics quality is＇ one of the important factors for fabrication of high precision and high aspect ratio microstructure. For investigating the pattern transfer accuracy of proximity UV-lithography, a theoretical model is constructed based on partial coherent light theory. The intensity distribution on the photo resist surface is attained and the related lithography profile is simulated. A compensation method which employs the genetic algorithm （GA） is studied to optimize photo mask. The strategy of the method is to modulate the optic field distribution by adjusting the pattern of the photo-mask. The evaluation strategy is proposed based on the simulation profile. The profile character is classified and limited to reduce the searching space. With the GA method, an optimum mask pattern is achieved. The simulation results show that the graphics distortion of photoresist is reduced obviously and the study provides a new approach to improving the graphics quality in lithography.