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Controllable Growth of Vertical Heterostructure GaTexSe1-x/Si by Molecular Beam Epitaxy
  • ISSN号：1936-0851
  • 期刊名称：ACS Nano
  • 时间：2015
  • 页码：8592-
  • 相关项目：复旦大学物理学基地
作者： Xiang Yuan|Peng Wang|Zhi-Gang Chen|Faxian Xiu|
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复旦大学物理学基地
期刊论文 38
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