Manganese and chromium doping in atomically thin MoS2
- ISSN号:1674-4926
- 期刊名称:《半导体学报:英文版》
- 时间:0
- 分类:TN[电子电信]
- 作者机构:[1]State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China, [2]Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
- 相关基金:Project supported by the National Young 1000 Talent Plan; the Pujiang Talent Plan in Shanghai; the National Natural Science Foundation of China(Nos.61322407,11474058,61674040); the Chinese National Science Fund for Talent Training in Basic Science(No.J1103204)