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Tunable Charge-Trap Memory Based on Few-Layer MoS2
  • 期刊名称：ACS Nano
  • 时间：2014
  • 页码：612-619
  • 相关项目：复旦大学物理学基地
作者： Q.-Q. Sun|D. W. Zhang|P. Zhou|F. Xiu|
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复旦大学物理学基地
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